IXXN200N60C3H1 Datasheet and Replacement
Type Designator: IXXN200N60C3H1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 780 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 570 pF
Package: SOT227
- IGBT Cross-Reference
IXXN200N60C3H1 Datasheet (PDF)
ixxn200n60c3h1.pdf

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60C3H1IC110 = 98AGenX3TM w/ Sonic VCE(sat) 2.1V Diodetfi(typ) = 80nsExtreme Light Punch ThroughEIGBT for 20-60kHz SwitchingSOT-227B E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continu
ixxn200n60b3.pdf

Advance Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60B3IC110 = 160AGenX3TM VCE(sat) 1.7V tfi(typ) = 110nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 20 V
ixxn200n60b3h1.pdf

Advance Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60B3H1IC110 = 98AGenX3TM w/Diode VCE(sat) 1.7V tfi(typ) = 110nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG300D120B6TC
Keywords - IXXN200N60C3H1 transistor datasheet
IXXN200N60C3H1 cross reference
IXXN200N60C3H1 equivalent finder
IXXN200N60C3H1 lookup
IXXN200N60C3H1 substitution
IXXN200N60C3H1 replacement
History: MMG300D120B6TC



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