All IGBT. IXXN200N60C3H1 Datasheet

 

IXXN200N60C3H1 Datasheet and Replacement


   Type Designator: IXXN200N60C3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 570 pF
   Qg ⓘ - Total Gate Charge, typ: 315 nC
   Package: SOT227
 

 IXXN200N60C3H1 substitution

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IXXN200N60C3H1 Datasheet (PDF)

 ..1. Size:201K  ixys
 ixxn200n60c3h1.pdf pdf_icon

IXXN200N60C3H1

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60C3H1IC110 = 98AGenX3TM w/ Sonic VCE(sat) 2.1V Diodetfi(typ) = 80nsExtreme Light Punch ThroughEIGBT for 20-60kHz SwitchingSOT-227B E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continu

 4.1. Size:178K  ixys
 ixxn200n60b3.pdf pdf_icon

IXXN200N60C3H1

Advance Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60B3IC110 = 160AGenX3TM VCE(sat) 1.7V tfi(typ) = 110nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 20 V

 4.2. Size:188K  ixys
 ixxn200n60b3h1.pdf pdf_icon

IXXN200N60C3H1

Advance Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60B3H1IC110 = 98AGenX3TM w/Diode VCE(sat) 1.7V tfi(typ) = 110nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous

Datasheet: IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , FGH75T65UPD , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 .

History: IKQ120N60TA

Keywords - IXXN200N60C3H1 transistor datasheet

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