IXXH60N65B4 IGBT. Datasheet pdf. Equivalent
Type Designator: IXXH60N65B4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 455 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 116 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO247
IXXH60N65B4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXXH60N65B4 Datasheet (PDF)
ixxh60n65b4.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH60N65B4GenX4TM IC110 = 60A VCE(sat) 2.0V tfi(typ) = 72nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 VC TabEVGEM Transient
ixxh60n65b4h1.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH60N65B4H1GenX4TM w/ Diode IC100 = 60A VCE(sat) 2.0V tfi(typ) = 72nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 VC TabEVGEM T
ixxh60n65c4.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH60N65C4GenX4TM IC110 = 60A VCE(sat) 2.2V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC Ta
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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