IXXH80N65B4 PDF and Equivalents Search

 

IXXH80N65B4 Specs and Replacement

Type Designator: IXXH80N65B4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Coesⓘ - Output Capacitance, typ: 176 pF

Package: TO247

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IXXH80N65B4 datasheet

 ..1. Size:211K  ixys
 ixxh80n65b4.pdf pdf_icon

IXXH80N65B4

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXXH80N65B4 GenX4TM IC110 = 80A VCE(sat) 2.1V tfi(typ) = 63ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGE... See More ⇒

 0.1. Size:218K  ixys
 ixxh80n65b4h1.pdf pdf_icon

IXXH80N65B4

XPTTM 650V IGBT VCES = 650V IXXH80N65B4H1 GenX4TM w/ Sonic IC110 = 80A Diode VCE(sat) 2.1V tfi(typ) = 63ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20... See More ⇒

Specs: IXGH10N60 , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 , IXGM40N60A , IXGP10N60 , IXGP10N60A , IXRH40N120 , IXXH80N65B4H1 , IXXK110N60B4H1 , IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 .

History: STGD3NB60SD | IXGM40N60A | IXGH28N60B | STGDL6NC60DI

Keywords - IXXH80N65B4 transistor spec

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