All IGBT. IXXH80N65B4 Datasheet

 

IXXH80N65B4 Datasheet and Replacement


   Type Designator: IXXH80N65B4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 176 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXXH80N65B4 Datasheet (PDF)

 ..1. Size:211K  ixys
 ixxh80n65b4.pdf pdf_icon

IXXH80N65B4

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXH80N65B4GenX4TM IC110 = 80A VCE(sat) 2.1V tfi(typ) = 63nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGE

 0.1. Size:218K  ixys
 ixxh80n65b4h1.pdf pdf_icon

IXXH80N65B4

XPTTM 650V IGBT VCES = 650VIXXH80N65B4H1GenX4TM w/ Sonic IC110 = 80ADiode VCE(sat) 2.1V tfi(typ) = 63nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MM25G120B | 7MBP100VDA060-50 | SKM75GD123D | AOGF40B65H2AL | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - IXXH80N65B4 transistor datasheet

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 IXXH80N65B4 equivalent finder
 IXXH80N65B4 lookup
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