All IGBT. IXXK110N65B4H1 Datasheet

 

IXXK110N65B4H1 Datasheet and Replacement


   Type Designator: IXXK110N65B4H1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 880 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 440 pF
   Package: TO264
      - IGBT Cross-Reference

 

IXXK110N65B4H1 Datasheet (PDF)

 ..1. Size:259K  ixys
 ixxk110n65b4h1.pdf pdf_icon

IXXK110N65B4H1

VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)

 5.1. Size:313K  ixys
 ixxk110n60b4h1.pdf pdf_icon

IXXK110N65B4H1

Advance Technical InformationVCES = 600VXPTTM 600V IXXK110N60B4H1IC100 = 110AGenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous

 9.1. Size:242K  ixys
 ixxk100n60c3h1 ixxx100n60c3h1.pdf pdf_icon

IXXK110N65B4H1

Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin

 9.2. Size:208K  ixys
 ixxk160n65b4.pdf pdf_icon

IXXK110N65B4H1

Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65B4IC110 = 160AGenX4TM IXXX160N65B4 VCE(sat) 1.80V tfi(typ) = 90nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M 650 VETabVGES Continuous

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History: DIM600DDM17-A

Keywords - IXXK110N65B4H1 transistor datasheet

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 IXXK110N65B4H1 equivalent finder
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 IXXK110N65B4H1 replacement

 

 
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