IXXK110N65B4H1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXXK110N65B4H1 Specs and Replacement

Type Designator: IXXK110N65B4H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 880 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 240 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 46 nS

Coesⓘ - Output Capacitance, typ: 440 pF

Package: TO264

IXXK110N65B4H1 Substitution

- IGBTⓘ Cross-Reference Search

IXXK110N65B4H1 datasheet

..1. Size:259K ixys
ixxk110n65b4h1.pdf pdf_icon

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V Tab VGES Continuous 20 V PLUS247 (IXXX) ... See More ⇒

5.1. Size:313K ixys
ixxk110n60b4h1.pdf pdf_icon

Advance Technical Information VCES = 600V XPTTM 600V IXXK110N60B4H1 IC100 = 110A GenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous... See More ⇒

9.1. Size:242K ixys
ixxk100n60c3h1 ixxx100n60c3h1.pdf pdf_icon

Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E Tab VGES Contin... See More ⇒

9.2. Size:208K ixys
ixxk160n65b4.pdf pdf_icon