All IGBT. IXXX160N65C4 Datasheet

 

IXXX160N65C4 Datasheet and Replacement


   Type Designator: IXXX160N65C4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 940 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 290 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 67 nS
   Coesⓘ - Output Capacitance, typ: 510 pF
   Qgⓘ - Total Gate Charge, typ: 422 nC
   Package: PLUS247
      - IGBT Cross-Reference

 

IXXX160N65C4 Datasheet (PDF)

 ..1. Size:208K  ixys
 ixxx160n65c4.pdf pdf_icon

IXXX160N65C4

Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65C4IC110 = 160AGenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)GCSymbol Test Conditions Maximum RatingsETabVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VPLUS247 (IXXX)V

 4.1. Size:208K  ixys
 ixxx160n65b4.pdf pdf_icon

IXXX160N65C4

Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65B4IC110 = 160AGenX4TM IXXX160N65B4 VCE(sat) 1.80V tfi(typ) = 90nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M 650 VETabVGES Continuous

 9.1. Size:238K  ixys
 ixxx100n60b3h1.pdf pdf_icon

IXXX160N65C4

VCES = 600VXPTTM 600V IXXK100N60B3H1IC100 = 100AGenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 VETabVGEM Transient 30

 9.2. Size:242K  ixys
 ixxk100n60c3h1 ixxx100n60c3h1.pdf pdf_icon

IXXX160N65C4

Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin

SHOW MORE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SKM200GB123D | IXGH64N60A3 | DM2G75SH6A | 1MB08D-120 | IXGH28N120B | APT15GT60KRG | IXGT40N60C2D1

Keywords - IXXX160N65C4 transistor datasheet

 IXXX160N65C4 cross reference
 IXXX160N65C4 equivalent finder
 IXXX160N65C4 lookup
 IXXX160N65C4 substitution
 IXXX160N65C4 replacement

 

 
Back to Top

 


 
.