IXXX160N65C4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXXX160N65C4
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 940 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 290 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 67 nS
Coesⓘ - Выходная емкость, типовая: 510 pF
Qgⓘ - Общий заряд затвора, typ: 422 nC
Тип корпуса: PLUS247
Аналог (замена) для IXXX160N65C4
IXXX160N65C4 Datasheet (PDF)
ixxx160n65c4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65C4IC110 = 160AGenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)GCSymbol Test Conditions Maximum RatingsETabVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VPLUS247 (IXXX)V
ixxx160n65b4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65B4IC110 = 160AGenX4TM IXXX160N65B4 VCE(sat) 1.80V tfi(typ) = 90nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M 650 VETabVGES Continuous
ixxx100n60b3h1.pdf
VCES = 600VXPTTM 600V IXXK100N60B3H1IC100 = 100AGenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 VETabVGEM Transient 30
ixxk100n60c3h1 ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxx110n65b4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)
ixxx110n60b4h1.pdf
Advance Technical InformationVCES = 600VXPTTM 600V IXXK110N60B4H1IC100 = 110AGenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous
ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
Другие IGBT... IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , IXXQ30N60B3M , IXXX100N60B3H1 , IXXX110N60B4H1 , IXXX110N65B4H1 , IXXX160N65B4 , IRGP4063 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , IXYH120N65C3 , IXYH20N65B3 , IXYH20N65C3 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2