1MBH30D-060 Datasheet. Specs and Replacement
Type Designator: 1MBH30D-060 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 220 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 58 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
tr ⓘ - Rise Time, typ: 600 nS
Coesⓘ - Output Capacitance, typ: 400 pF
Package: TO3PL
1MBH30D-060 Substitution - IGBTⓘ Cross-Reference Search
1MBH30D-060 datasheet
1mbh30d-060.pdf
1MB30-060,1MBH30D-060, Molded IGBT 600V / 30A Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic... See More ⇒
Specs: 1MBH10D-060, 1MBH10D-120, 1MBH15-120, 1MBH15D-060, 1MBH15D-120, 1MBH20D-060, 1MBH25-120, 1MBH25D-120, YGW60N65F1A1, 1MBH50-060, 1MBH50D-060, HCKW40N65H2, HCKW60N65BH2A, HCKW60N65CH2A, HCKW75N65BH2, HCKW75N65FH2, 2N6975
Keywords - 1MBH30D-060 transistor spec
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History: HGT1S7N60A4DS | HCKW75N65BH2 | 1MBH50-060 | HGT1S12N60C3S | HCKW75N65FH2 | HGT1S14N36G3VLS9A | 2N6975
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