All IGBT. 1MBH30D-060 Datasheet

 

1MBH30D-060 IGBT. Datasheet pdf. Equivalent


   Type Designator: 1MBH30D-060
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 58 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 600 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Package: TO3PL

 1MBH30D-060 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

1MBH30D-060 Datasheet (PDF)

 ..1. Size:64K  fuji
 1mbh30d-060.pdf

1MBH30D-060 1MBH30D-060

1MB30-060,1MBH30D-060,Molded IGBT600V / 30AMolded PackageFeatures Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-upApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supplyEquivalent Circuit Schematic

Datasheet: 1MBH10D-060 , 1MBH10D-120 , 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , IKW30N60H3 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 .

 

 
Back to Top