IXXX300N60C3 Specs and Replacement
Type Designator: IXXX300N60C3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 510 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 85 nS
Coesⓘ - Output Capacitance, typ: 743 pF
Package: PLUS247
IXXX300N60C3 Substitution - IGBTⓘ Cross-Reference Search
IXXX300N60C3 datasheet
ixxx300n60c3.pdf
Advance Technical Information VCES = 600V XPTTM 600V IGBTs IXXK300N60C3 IC110 = 300A GenX3TM IXXX300N60C3 VCE(sat) 2.0V tfi(typ) = 82ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G C VCGR TJ = 25 C to 175 C, RGE = 1M 600 V E Tab VGES Continuous 20 V... See More ⇒
Specs: IXXK300N60C3, IXXQ30N60B3M, IXXX100N60B3H1, IXXX110N60B4H1, IXXX110N65B4H1, IXXX160N65B4, IXXX160N65C4, IXXX200N65B4, GT30F124, IXYH100N65B3, IXYH100N65C3, IXYH120N65B3, IXYH120N65C3, IXYH20N65B3, IXYH20N65C3, IXYH24N90C3, IXYH24N90C3D1
Keywords - IXXX300N60C3 transistor spec
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History: IXYH100N65B3
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