All IGBT. IXXX300N60C3 Datasheet

 

IXXX300N60C3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXXX300N60C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 510 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 85 nS
   Coesⓘ - Output Capacitance, typ: 743 pF
   Qgⓘ - Total Gate Charge, typ: 438 nC
   Package: PLUS247

 IXXX300N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXXX300N60C3 Datasheet (PDF)

 ..1. Size:223K  ixys
 ixxx300n60c3.pdf

IXXX300N60C3 IXXX300N60C3

Advance Technical InformationVCES = 600VXPTTM 600V IGBTs IXXK300N60C3IC110 = 300AGenX3TM IXXX300N60C3 VCE(sat) 2.0V tfi(typ) = 82nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 V GCVCGR TJ = 25C to 175C, RGE = 1M 600 VETabVGES Continuous 20 V

Datasheet: IXXK300N60C3 , IXXQ30N60B3M , IXXX100N60B3H1 , IXXX110N60B4H1 , IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , GT30F124 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , IXYH120N65C3 , IXYH20N65B3 , IXYH20N65C3 , IXYH24N90C3 , IXYH24N90C3D1 .

 

 
Back to Top