IXXX300N60C3 PDF and Equivalents Search

 

IXXX300N60C3 Specs and Replacement

Type Designator: IXXX300N60C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 510 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 85 nS

Coesⓘ - Output Capacitance, typ: 743 pF

Package: PLUS247

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IXXX300N60C3 datasheet

 ..1. Size:223K  ixys
ixxx300n60c3.pdf pdf_icon

IXXX300N60C3

Advance Technical Information VCES = 600V XPTTM 600V IGBTs IXXK300N60C3 IC110 = 300A GenX3TM IXXX300N60C3 VCE(sat) 2.0V tfi(typ) = 82ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G C VCGR TJ = 25 C to 175 C, RGE = 1M 600 V E Tab VGES Continuous 20 V... See More ⇒

Specs: IXXK300N60C3, IXXQ30N60B3M, IXXX100N60B3H1, IXXX110N60B4H1, IXXX110N65B4H1, IXXX160N65B4, IXXX160N65C4, IXXX200N65B4, GT30F124, IXYH100N65B3, IXYH100N65C3, IXYH120N65B3, IXYH120N65C3, IXYH20N65B3, IXYH20N65C3, IXYH24N90C3, IXYH24N90C3D1

Keywords - IXXX300N60C3 transistor spec

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