IXYH100N65B3 PDF and Equivalents Search

 

IXYH100N65B3 Specs and Replacement

Type Designator: IXYH100N65B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 225 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 280 pF

Package: TO247

 IXYH100N65B3 Substitution

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IXYH100N65B3 datasheet

 ..1. Size:233K  ixys
 ixyh100n65b3.pdf pdf_icon

IXYH100N65B3

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH100N65B3 IC110 = 100A GenX3TM VCE(sat) 1.85V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C Ta... See More ⇒

 4.1. Size:232K  ixys
 ixyh100n65c3.pdf pdf_icon

IXYH100N65B3

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH100N65C3 IC110 = 100A GenX3TM VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C ... See More ⇒

 9.1. Size:233K  ixys
 ixyh120n65c3.pdf pdf_icon

IXYH100N65B3

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH120N65C3 IC110 = 120A GenX3TM VCE(sat) 2.8V tfi(typ) = 46ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C Tab... See More ⇒

 9.2. Size:232K  ixys
 ixyh120n65b3.pdf pdf_icon

IXYH100N65B3

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH120N65B3 IC110 = 120A GenX3TM VCE(sat) 1.90V tfi(typ) = 107ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C T... See More ⇒

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Specs: IXXQ30N60B3M, IXXX100N60B3H1, IXXX110N60B4H1, IXXX110N65B4H1, IXXX160N65B4, IXXX160N65C4, IXXX200N65B4, IXXX300N60C3, RJP63K2DPP-M0, IXYH100N65C3, IXYH120N65B3, IXYH120N65C3, IXYH20N65B3, IXYH20N65C3, IXYH24N90C3, IXYH24N90C3D1, IXYH30N170C

Keywords - IXYH100N65B3 transistor spec

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