IXYH24N90C3D1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYH24N90C3D1 Specs and Replacement

Type Designator: IXYH24N90C3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 44 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 64 pF

Package: TO247

IXYH24N90C3D1 Substitution

- IGBT ⓘ Cross-Reference Search

IXYH24N90C3D1 datasheet

..1. Size:325K ixys
ixyh24n90c3d1.pdf pdf_icon

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH24N90C3D1 GenX3TM w/Diode IC90 = 24A VCE(sat) 2.7V tfi(typ) = 90ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C, RGE = 1M 900 V VGES Continuous 20 V G VGEM Transient 30 V C E Tab IC25 ... See More ⇒

3.1. Size:168K ixys
ixyh24n90c3.pdf pdf_icon

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH24N90C3 GenX3TM IC110 = 24A VCE(sat) 2.7V tfi(typ) = 90ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V G VGEM Transient 30 V C E Tab IC25 TC = 25 ... See More ⇒

9.1. Size:190K ixys
ixyh20n120c3d1.pdf pdf_icon

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9.2. Size:273K ixys
ixyh20n65b3.pdf pdf_icon

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175 C 650... See More ⇒