Справочник IGBT. IXYH24N90C3D1

 

IXYH24N90C3D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXYH24N90C3D1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 44 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 36 nS
   Coesⓘ - Выходная емкость, типовая: 64 pF
   Qgⓘ - Общий заряд затвора, typ: 40 nC
   Тип корпуса: TO247

 Аналог (замена) для IXYH24N90C3D1

 

 

IXYH24N90C3D1 Datasheet (PDF)

 ..1. Size:325K  ixys
 ixyh24n90c3d1.pdf

IXYH24N90C3D1 IXYH24N90C3D1

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH24N90C3D1GenX3TM w/Diode IC90 = 24A VCE(sat) 2.7V tfi(typ) = 90nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C, RGE = 1M 900 VVGES Continuous 20 VGVGEM Transient 30 VCETabIC25

 3.1. Size:168K  ixys
 ixyh24n90c3.pdf

IXYH24N90C3D1 IXYH24N90C3D1

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH24N90C3GenX3TM IC110 = 24A VCE(sat) 2.7V tfi(typ) = 90nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VGVGEM Transient 30 VCETabIC25 TC = 25

 9.1. Size:190K  ixys
 ixyh20n120c3d1.pdf

IXYH24N90C3D1 IXYH24N90C3D1

1200V XPTTM IGBT VCES = 1200VIXYH20N120C3D1GenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEV

 9.2. Size:273K  ixys
 ixyh20n65b3.pdf

IXYH24N90C3D1 IXYH24N90C3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

 9.3. Size:428K  ixys
 ixyh20n120c3.pdf

IXYH24N90C3D1 IXYH24N90C3D1

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

 9.4. Size:257K  ixys
 ixyh20n65c3.pdf

IXYH24N90C3D1 IXYH24N90C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C

 9.5. Size:221K  ixys
 ixya20n120c3hv ixyp20n120c3 ixyh20n120c3.pdf

IXYH24N90C3D1 IXYH24N90C3D1

1200V XPTTM VCES = 1200VIXYA20N120C3HVGenX3TM IGBTs IC110 = 20AIXYP20N120C3 VCE(sat) 3.4V IXYH20N120C3tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263HV (IXYA)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 1200 VTO-220 (IXYP)VCGR TJ = 25C to 175C, RGE

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