HGTM12N40C1 IGBT. Datasheet pdf. Equivalent

   Type Designator: HGTM12N40C1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 19 nC
   Package: TO3

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