HGTM12N40C1 Datasheet and Replacement
Type Designator: HGTM12N40C1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 50 nS
Package: TO3
- IGBT Cross-Reference
HGTM12N40C1 Datasheet (PDF)
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Datasheet: HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , FGH40N60UFD , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 .
History: MMG300D120B6UC | AOTF5B65M2
Keywords - HGTM12N40C1 transistor datasheet
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History: MMG300D120B6UC | AOTF5B65M2
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