All IGBT. IXYQ30N65B3D1 Datasheet

 

IXYQ30N65B3D1 Datasheet and Replacement


   Type Designator: IXYQ30N65B3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 172 pF
   Package: TO3P
 

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IXYQ30N65B3D1 Datasheet (PDF)

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IXYQ30N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH30N65B3D1GenX3TM w/ Diode IC110 = 30AIXYQ30N65B3D1 VCE(sat) 2.1V tfi(typ) = 33nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4IBC30KD | IXSP15N120B | TT010N060EQ | AOTS40B65H1 | AP20GT60ASP-HF | 2MBI300S-120 | APTGT75A170D1

Keywords - IXYQ30N65B3D1 transistor datasheet

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