All IGBT. IXYQ30N65B3D1 Datasheet

 

IXYQ30N65B3D1 Datasheet and Replacement


   Type Designator: IXYQ30N65B3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 172 pF
   Package: TO3P
 

 IXYQ30N65B3D1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXYQ30N65B3D1 Datasheet (PDF)

 ..1. Size:204K  ixys
 ixyq30n65b3d1.pdf pdf_icon

IXYQ30N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH30N65B3D1GenX3TM w/ Diode IC110 = 30AIXYQ30N65B3D1 VCE(sat) 2.1V tfi(typ) = 33nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,

Datasheet: IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , GT30F126 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 .

History: IXSR40N60BD1 | APT30GP60BDQ1G | AP20GT60ASP-HF

Keywords - IXYQ30N65B3D1 transistor datasheet

 IXYQ30N65B3D1 cross reference
 IXYQ30N65B3D1 equivalent finder
 IXYQ30N65B3D1 lookup
 IXYQ30N65B3D1 substitution
 IXYQ30N65B3D1 replacement

 

 
Back to Top

 


 
.