IXYQ30N65B3D1 PDF and Equivalents Search

 

IXYQ30N65B3D1 Specs and Replacement

Type Designator: IXYQ30N65B3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 172 pF

Package: TO3P

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IXYQ30N65B3D1 datasheet

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 ixyq30n65b3d1.pdf pdf_icon

IXYQ30N65B3D1

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH30N65B3D1 GenX3TM w/ Diode IC110 = 30A IXYQ30N65B3D1 VCE(sat) 2.1V tfi(typ) = 33ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, ... See More ⇒

Specs: IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , FGA60N65SMD , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 .

Keywords - IXYQ30N65B3D1 transistor spec

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