All IGBT. IXYT20N120C3D1HV Datasheet

 

IXYT20N120C3D1HV Datasheet and Replacement


   Type Designator: IXYT20N120C3D1HV
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 36 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qg ⓘ - Total Gate Charge, typ: 53 nC
   Package: TO268HV
 

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IXYT20N120C3D1HV Datasheet (PDF)

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IXYT20N120C3D1HV

1200V XPTTM IGBT VCES = 1200VIXYT20N120C3D1HVGenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-268HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VEVGES Continuous 20 V C (Tab)

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGK50N60BD1

Keywords - IXYT20N120C3D1HV transistor datasheet

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