IXYT20N120C3D1HV IGBT. Datasheet pdf. Equivalent
Type Designator: IXYT20N120C3D1HV
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 36 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Qgⓘ - Total Gate Charge, typ: 53 nC
Package: TO268HV
IXYT20N120C3D1HV Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYT20N120C3D1HV Datasheet (PDF)
ixyt20n120c3d1hv.pdf
1200V XPTTM IGBT VCES = 1200VIXYT20N120C3D1HVGenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-268HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VEVGES Continuous 20 V C (Tab)
Datasheet: IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , RJH30E2DPP , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 .
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