IXYT20N120C3D1HV Specs and Replacement
Type Designator: IXYT20N120C3D1HV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 36 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO268HV IXYT20N120C3D1HV Substitution - IGBT ⓘ Cross-Reference Search
IXYT20N120C3D1HV datasheet
ixyt20n120c3d1hv.pdf
1200V XPTTM IGBT VCES = 1200V IXYT20N120C3D1HV GenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching TO-268HV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V E VGES Continuous 20 V C (Tab) ... See More ⇒
Specs: IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IHW20N120R3 , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 .
Keywords - IXYT20N120C3D1HV transistor spec
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