All IGBT. IXYT20N120C3D1HV Datasheet

 

IXYT20N120C3D1HV Datasheet and Replacement


   Type Designator: IXYT20N120C3D1HV
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 36 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO268HV
 

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IXYT20N120C3D1HV Datasheet (PDF)

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IXYT20N120C3D1HV

1200V XPTTM IGBT VCES = 1200VIXYT20N120C3D1HVGenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-268HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VEVGES Continuous 20 V C (Tab)

Datasheet: IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , SGT50T65FD1PN , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 .

History: AOTF5B60D | IRG4BC10S | NTE3303 | IXYQ30N65B3D1 | APT30GP60BDQ1G | IXSR40N60BD1 | AP20GT60ASP-HF

Keywords - IXYT20N120C3D1HV transistor datasheet

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