All IGBT. IXYT30N450HV Datasheet

 

IXYT30N450HV Datasheet and Replacement


   Type Designator: IXYT30N450HV
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 430 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 318 nS
   Coesⓘ - Output Capacitance, typ: 83 pF
   Qg ⓘ - Total Gate Charge, typ: 88 nC
   Package: TO268HV
 

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IXYT30N450HV Datasheet (PDF)

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IXYT30N450HV

Advance Technical InformationHigh Voltage XPTTMVCES = 4500VIXYT30N450HVIGBTIXYH30N450HVIC110 = 30AVCE(sat) 3.9VTO-268HV (IXYT)GE C (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VTO-247HV (IXYH)VCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 60 AGI

 7.1. Size:268K  ixys
 ixyt30n65c3h1hv.pdf pdf_icon

IXYT30N450HV

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYT30N65C3H1HVGenX3TM w/ Sonic IC110 = 30AIXYH30N65C3H1Diode VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-268HVSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VEVCGR TJ = 25

Datasheet: IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , FGA60N65SMD , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 .

History: APT80GP60B2

Keywords - IXYT30N450HV transistor datasheet

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