All IGBT. HGTM12N40E1 Datasheet

 

HGTM12N40E1 IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTM12N40E1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: TO3

 HGTM12N40E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTM12N40E1 Datasheet (PDF)

 ..1. Size:333K  1
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HGTM12N40E1 HGTM12N40E1

Datasheet: HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , FGH40N60UFD , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D .

 

 
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