HGTM12N40E1 Datasheet and Replacement
Type Designator: HGTM12N40E1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 50 nS
Package: TO3
HGTM12N40E1 substitution
HGTM12N40E1 Datasheet (PDF)
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Datasheet: HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , GT30J124 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D .
History: IXA12IF1200TC | CM50MXA-24S | HGTG5N120CND
Keywords - HGTM12N40E1 transistor datasheet
HGTM12N40E1 cross reference
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History: IXA12IF1200TC | CM50MXA-24S | HGTG5N120CND
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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