IXYH40N65B3 PDF and Equivalents Search

 

IXYH40N65B3 Specs and Replacement

Type Designator: IXYH40N65B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 86 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 123 pF

Package: TO247

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IXYH40N65B3 datasheet

 ..1. Size:170K  ixys
 ixyh40n65b3.pdf pdf_icon

IXYH40N65B3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65B3 GenX3TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 5-30kHz Switching Symbol Test Conditions Maximum Ratings TO-247 (IXYH) VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Con... See More ⇒

 0.1. Size:197K  ixys
 ixyh40n65b3d1.pdf pdf_icon

IXYH40N65B3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65B3D1 GenX3TM w/ Diode IC110 = 40A IXYQ40N65B3D1 VCE(sat) 2.0V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, ... See More ⇒

 5.1. Size:197K  ixys
 ixyh40n65c3d1.pdf pdf_icon

IXYH40N65B3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65C3D1 GenX3TM w/ Diode IC110 = 40A IXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 ... See More ⇒

 5.2. Size:183K  ixys
 ixyh40n65c3h1.pdf pdf_icon

IXYH40N65B3

XPTTM 650V IGBT VCES = 650V IXYH40N65C3H1 GenX3TM w/ Sonic Diode IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20 V... See More ⇒

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Specs: IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , MBQ50T65FDSC , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 .

Keywords - IXYH40N65B3 transistor spec

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