All IGBT. IXYH40N65B3D1 Datasheet

 

IXYH40N65B3D1 Datasheet and Replacement


   Type Designator: IXYH40N65B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 86 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qg ⓘ - Total Gate Charge, typ: 68 nC
   Package: TO247
 

 IXYH40N65B3D1 substitution

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IXYH40N65B3D1 Datasheet (PDF)

 ..1. Size:197K  ixys
 ixyh40n65b3d1.pdf pdf_icon

IXYH40N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65B3D1 VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,

 3.1. Size:170K  ixys
 ixyh40n65b3.pdf pdf_icon

IXYH40N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3GenX3TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingSymbol Test Conditions Maximum Ratings TO-247 (IXYH)VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Con

 5.1. Size:197K  ixys
 ixyh40n65c3d1.pdf pdf_icon

IXYH40N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175

 5.2. Size:183K  ixys
 ixyh40n65c3h1.pdf pdf_icon

IXYH40N65B3D1

XPTTM 650V IGBT VCES = 650VIXYH40N65C3H1GenX3TM w/ Sonic Diode IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 V

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRGP4078D

Keywords - IXYH40N65B3D1 transistor datasheet

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