IXYH75N65C3H1 Specs and Replacement
Type Designator: IXYH75N65C3H1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 170 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 67 nS
Coesⓘ - Output Capacitance, typ: 307 pF
Package: TO247
IXYH75N65C3H1 Substitution - IGBT ⓘ Cross-Reference Search
IXYH75N65C3H1 datasheet
ixyh75n65c3h1.pdf
Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3H1 IC110 = 75A GenX3TM w/ Sonic VCE(sat) 2.3V Diode tfi(typ) = 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = ... See More ⇒
ixyh75n65c3d1.pdf
Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3D1 IC110 = 75A GenX3TM w/ Diode VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 6... See More ⇒
ixyh75n65c3.pdf
VCES = 650V XPTTM 650V IGBT IXYH75N65C3 IC110 = 75A GenX3TM VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V G C Tab VGEM ... See More ⇒
Specs: IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , CRG15T120BNR3S , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 .
Keywords - IXYH75N65C3H1 transistor spec
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