All IGBT. IXYJ30N120C3D1 Datasheet

 

IXYJ30N120C3D1 Datasheet and Replacement


   Type Designator: IXYJ30N120C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO247
 

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IXYJ30N120C3D1 Datasheet (PDF)

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IXYJ30N120C3D1

Advance Technical Information1200V XPTTM GenX3TM VCES = 1200VIXYJ30N120C3D1IGBT w/ Diode IC110 = 14A VCE(sat) 3.3V (Electrically Isolated Tab)tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingISO TO-247TME153432Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C

Datasheet: IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IKW30N60H3 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 .

History: APT30GN60KG

Keywords - IXYJ30N120C3D1 transistor datasheet

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