All IGBT. IXYJ30N120C3D1 Datasheet

 

IXYJ30N120C3D1 Datasheet and Replacement


   Type Designator: IXYJ30N120C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXYJ30N120C3D1 Datasheet (PDF)

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IXYJ30N120C3D1

Advance Technical Information1200V XPTTM GenX3TM VCES = 1200VIXYJ30N120C3D1IGBT w/ Diode IC110 = 14A VCE(sat) 3.3V (Electrically Isolated Tab)tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingISO TO-247TME153432Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - IXYJ30N120C3D1 transistor datasheet

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