IXYJ30N120C3D1 Datasheet. Specs and Replacement

Type Designator: IXYJ30N120C3D1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 140 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 140 pF

Package: TO247

 IXYJ30N120C3D1 Substitution

- IGBTⓘ Cross-Reference Search

 

IXYJ30N120C3D1 datasheet

 ..1. Size:224K  ixys
 ixyj30n120c3d1.pdf pdf_icon

IXYJ30N120C3D1

Advance Technical Information 1200V XPTTM GenX3TM VCES = 1200V IXYJ30N120C3D1 IGBT w/ Diode IC110 = 14A VCE(sat) 3.3V (Electrically Isolated Tab) tfi(typ) = 88ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C ... See More ⇒

Specs: IXYH50N65C3, IXYH50N65C3D1, IXYH50N65C3H1, IXYH60N90C3, IXYH75N65C3, IXYH75N65C3D1, IXYH75N65C3H1, IXYH80N90C3, GT45F122, IXYK100N120B3, IXYK100N65B3D1, IXYK100N65C3D1, IXYK120N120B3, IXYK140N90C3, IXYL60N450, IXYP10N65C3, IXYP10N65C3D1

Keywords - IXYJ30N120C3D1 transistor spec

 IXYJ30N120C3D1 cross reference
 IXYJ30N120C3D1 equivalent finder
 IXYJ30N120C3D1 lookup
 IXYJ30N120C3D1 substitution
 IXYJ30N120C3D1 replacement