IXYP15N65C3D1M PDF and Equivalents Search

 

IXYP15N65C3D1M Specs and Replacement

Type Designator: IXYP15N65C3D1M

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 57 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 18 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 52 pF

Package: TO220F

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IXYP15N65C3D1M datasheet

 ..1. Size:195K  ixys
 ixyp15n65c3d1m.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3D1M GenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab) tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR ... See More ⇒

 1.1. Size:222K  ixys
 ixyp15n65c3d1.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25 C to 175 C 650 V VCGR ... See More ⇒

 3.1. Size:190K  ixys
 ixyp15n65c3.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3 GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C Tab... See More ⇒

 9.1. Size:217K  ixys
 ixyp10n65c3d1.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1 GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V C Tab E VCGR TJ = 25 C to 175 C, RGE ... See More ⇒

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Specs: IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , CRG75T60AK3HD , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 .

History: HIA30N60BP

Keywords - IXYP15N65C3D1M transistor spec

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