All IGBT. IXYP15N65C3D1M Datasheet

 

IXYP15N65C3D1M Datasheet and Replacement


   Type Designator: IXYP15N65C3D1M
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 57 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 52 pF
   Qg ⓘ - Total Gate Charge, typ: 19 nC
   Package: TO220F
 

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IXYP15N65C3D1M Datasheet (PDF)

 ..1. Size:195K  ixys
 ixyp15n65c3d1m.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab)tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

 1.1. Size:222K  ixys
 ixyp15n65c3d1.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA15N65C3D1GenX3TM w/Diode IC110 = 15AIXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEC (Tab)VCES TJ = 25C to 175C 650 VVCGR

 3.1. Size:190K  ixys
 ixyp15n65c3.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTab

 9.1. Size:217K  ixys
 ixyp10n65c3d1.pdf pdf_icon

IXYP15N65C3D1M

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE

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Datasheet: IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , TGD30N40P , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 .

Keywords - IXYP15N65C3D1M transistor datasheet

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