IXGT25N250HV Datasheet. Specs and Replacement

Type Designator: IXGT25N250HV  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 233 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: TO268-2L

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IXGT25N250HV datasheet

 ..1. Size:188K  ixys
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IXGT25N250HV

Advance Technical Information VCES = 2500V High Voltage IGBT IXGT25N250HV IC110 = 25A For Capacitor Discharge Applications VCE(sat) 2.9V TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 2500 V G = Gate C = Collector VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E = Emiiter Tab = Collector VGES Continuous 20 V VGEM Tra... See More ⇒

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IXGT25N250HV

Preliminary Technical Information IXGH25N250 VCES = 2500 V High Voltage IGBT IXGT25N250 IC25 = 60 A For Capacitor Discharge Applications IXGV25N250S VCE(sat) 2.9 V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 2500 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transi... See More ⇒

 7.1. Size:138K  ixys
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IXGT25N250HV

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110... See More ⇒

 7.2. Size:142K  ixys
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IXGT25N250HV

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110... See More ⇒

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Specs: IXYL60N450, IXYP10N65C3, IXYP10N65C3D1, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1, IXYP15N65C3D1M, IXGR72N60C3, GT30F133, IXGT6N170AHV, IXGX50N60AU1S, IXXA30N65C3HV, IXXR100N60B3H1, IXXR110N60B4H1, IXXR110N65B4H1, IXYA15N65C3D1, IXYA20N120C3HV

Keywords - IXGT25N250HV transistor spec

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