IXGX50N60AU1S Datasheet. Specs and Replacement

Type Designator: IXGX50N60AU1S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 210 nS

Package: TO247

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IXGX50N60AU1S datasheet

 ..1. Size:136K  ixys
 ixgx50n60au1s.pdf pdf_icon

IXGX50N60AU1S

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC... See More ⇒

 2.1. Size:136K  ixys
 ixgx50n60au1.pdf pdf_icon

IXGX50N60AU1S

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC... See More ⇒

 4.1. Size:121K  ixys
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IXGX50N60AU1S

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I... See More ⇒

 4.2. Size:143K  ixys
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IXGX50N60AU1S

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient ... See More ⇒

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Specs: IXYP10N65C3D1, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1, IXYP15N65C3D1M, IXGR72N60C3, IXGT25N250HV, IXGT6N170AHV, TGAN20N135FD, IXXA30N65C3HV, IXXR100N60B3H1, IXXR110N60B4H1, IXXR110N65B4H1, IXYA15N65C3D1, IXYA20N120C3HV, IXYA20N65B3, IXYA20N65C3

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