All IGBT. IXGX50N60AU1S Datasheet

 

IXGX50N60AU1S Datasheet and Replacement


   Type Designator: IXGX50N60AU1S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 210 nS
   Qg ⓘ - Total Gate Charge, typ: 200 nC
   Package: TO247
 

 IXGX50N60AU1S substitution

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IXGX50N60AU1S Datasheet (PDF)

 ..1. Size:136K  ixys
 ixgx50n60au1s.pdf pdf_icon

IXGX50N60AU1S

Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC

 2.1. Size:136K  ixys
 ixgx50n60au1.pdf pdf_icon

IXGX50N60AU1S

Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC

 4.1. Size:121K  ixys
 ixgx50n60a2d1.pdf pdf_icon

IXGX50N60AU1S

Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I

 4.2. Size:143K  ixys
 ixgk50n60a2u1 ixgx50n60a2u1.pdf pdf_icon

IXGX50N60AU1S

Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient

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Datasheet: IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , TGPF30N43P , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 .

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