IXA220I650NA Datasheet and Replacement
Type Designator: IXA220I650NA
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 255 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Package: SOT227
- IGBT Cross-Reference
IXA220I650NA Datasheet (PDF)
ixa220i650na.pdf

IXA220I650NAtentativeVCES = 650VXPT IGBTI= 255AC25VCE(sat) = 1.6VSingle IGBTPart numberIXA220I650NABackside: isolated(C) 3(G) 2(E) 1+4Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter In
mixa225pf1200tsf.pdf

MIXA225PF1200TSFpreliminaryVCES = 2x 1200VXPT IGBT ModuleI= 360AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA225PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module re
mixa225rf1200tsf.pdf

MIXA225RF1200TSFtentativeVCES = 1200 VXPT IGBT ModuleIC25 = 360 AVCE(sat) = 1.8 VBoost chopper + free wheeling Diodes + NTCPart numberMIXA225RF1200TSF52 1 8 9T43DBoostD10/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one Brake for AC motor drives Industry standard outlinepower semiconductor module r
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - IXA220I650NA transistor datasheet
IXA220I650NA cross reference
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History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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