All IGBT. IXA70R1200NA Datasheet

 

IXA70R1200NA Datasheet and Replacement


   Type Designator: IXA70R1200NA
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Qg ⓘ - Total Gate Charge, typ: 190 nC
   Package: SOT227
 

 IXA70R1200NA substitution

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IXA70R1200NA Datasheet (PDF)

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IXA70R1200NA

IXA70R1200NAVCES = 1200VXPT IGBTI= 100AC25VCE(sat) = 1.8VBoost ChopperPart numberIXA70R1200NABackside: isolated4321Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry standard out

 9.1. Size:134K  ixys
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IXA70R1200NA

IXA70I1200NAVCES = 1200VXPT IGBTI= 100AC25VCE(sat) = 1.8VSingle IGBTPart numberIXA70I1200NABackside: isolated(C) 3(G) 2(E) 1+4Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry sta

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG8P40N120KD

Keywords - IXA70R1200NA transistor datasheet

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