All IGBT. IXA70R1200NA Datasheet

 

IXA70R1200NA Datasheet and Replacement


   Type Designator: IXA70R1200NA
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 190 nC
   Package: SOT227
      - IGBT Cross-Reference

 

IXA70R1200NA Datasheet (PDF)

 ..1. Size:150K  ixys
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IXA70R1200NA

IXA70R1200NAVCES = 1200VXPT IGBTI= 100AC25VCE(sat) = 1.8VBoost ChopperPart numberIXA70R1200NABackside: isolated4321Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry standard out

 9.1. Size:134K  ixys
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IXA70R1200NA

IXA70I1200NAVCES = 1200VXPT IGBTI= 100AC25VCE(sat) = 1.8VSingle IGBTPart numberIXA70I1200NABackside: isolated(C) 3(G) 2(E) 1+4Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry sta

Datasheet: IXYF30N450 , IXYF40N450 , IXA20PT1200LB , IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IRG4PF50W , ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D .

History: IXGA20N120A3 | MSG20T65FLE | RJP60V0DPM | MG300N1US1 | GT10G101 | CT20TM-8

Keywords - IXA70R1200NA transistor datasheet

 IXA70R1200NA cross reference
 IXA70R1200NA equivalent finder
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