IXA70R1200NA Specs and Replacement
Type Designator: IXA70R1200NA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: SOT227
IXA70R1200NA Substitution - IGBT ⓘ Cross-Reference Search
IXA70R1200NA datasheet
ixa70r1200na.pdf
IXA70R1200NA VCES = 1200V XPT IGBT I= 100A C25 VCE(sat) = 1.8V Boost Chopper Part number IXA70R1200NA Backside isolated 4 3 2 1 Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry standard out... See More ⇒
ixa70i1200na.pdf
IXA70I1200NA VCES = 1200V XPT IGBT I= 100A C25 VCE(sat) = 1.8V Single IGBT Part number IXA70I1200NA Backside isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry sta... See More ⇒
Specs: IXYF30N450 , IXYF40N450 , IXA20PT1200LB , IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IKW40N65WR5 , ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D .
Keywords - IXA70R1200NA transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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