RGT16NS65D Datasheet. Specs and Replacement

Type Designator: RGT16NS65D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 47 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 8 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 21 pF

Package: TO263

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RGT16NS65D datasheet

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RGT16NS65D

RGT16NS65D 650V 8A Field Stop Trench IGBT Data Sheet lOutline LPDS (TO-263S) VCES 650V (2) IC(100 C) 8A VCE(sat) (Typ.) 1.65V (1) (3) PD 94W lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD ... See More ⇒

Specs: IXA220I650NA, IXA30RG1200DHGLB, IXA40I4000KN, IXA40RG1200DHGLB, IXA70R1200NA, ISL9V3040P3, ISL9V3040S3, RGT00TS65D, GT60N321, RGT30NS65D, RGT40NS65D, RGT40TS65D, RGT50TS65D, RGT60TS65D, RGT80TS65D, RGT8BM65D, RGT8NS65D

Keywords - RGT16NS65D transistor spec

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