All IGBT. RGT16NS65D Datasheet

 

RGT16NS65D Datasheet and Replacement


   Type Designator: RGT16NS65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 47 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 21 pF
   Qg ⓘ - Total Gate Charge, typ: 21 nC
   Package: TO263
 

 RGT16NS65D substitution

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RGT16NS65D Datasheet (PDF)

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RGT16NS65D

RGT16NS65D 650V 8A Field Stop Trench IGBT Data SheetlOutline LPDS (TO-263S)VCES650V(2) IC(100C)8AVCE(sat) (Typ.)1.65V(1) (3) PD94WlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD

Datasheet: IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA , ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT50TS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , RGT8NS65D .

History: APT25GN120B

Keywords - RGT16NS65D transistor datasheet

 RGT16NS65D cross reference
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