All IGBT. RGT60TS65D Datasheet

 

RGT60TS65D IGBT. Datasheet pdf. Equivalent


   Type Designator: RGT60TS65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 97 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 72 pF
   Qgⓘ - Total Gate Charge, typ: 58 nC
   Package: TO247

 RGT60TS65D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGT60TS65D Datasheet (PDF)

 ..1. Size:745K  rohm
 rgt60ts65d.pdf

RGT60TS65D RGT60TS65D

RGT60TS65D 650V 30A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)30AVCE(sat) (Typ.)1.65VPD194W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Built i

Datasheet: ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , FGH30S130P , RGT80TS65D , RGT8BM65D , RGT8NS65D , RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 .

 

 
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