RGT60TS65D Datasheet. Specs and Replacement

Type Designator: RGT60TS65D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 97 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 72 pF

Package: TO247

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RGT60TS65D datasheet

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RGT60TS65D

RGT60TS65D 650V 30A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 30A VCE(sat) (Typ.) 1.65V PD 194W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i... See More ⇒

Specs: ISL9V3040P3, ISL9V3040S3, RGT00TS65D, RGT16NS65D, RGT30NS65D, RGT40NS65D, RGT40TS65D, RGT50TS65D, GT30G122, RGT80TS65D, RGT8BM65D, RGT8NS65D, RGTH00TS65, RGTH00TS65D, RGTH40TS65, RGTH40TS65D, RGTH50TS65

Keywords - RGT60TS65D transistor spec

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