RGT60TS65D PDF and Equivalents Search

 

RGT60TS65D Specs and Replacement

Type Designator: RGT60TS65D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 97 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 72 pF

Package: TO247

 RGT60TS65D Substitution

- IGBT ⓘ Cross-Reference Search

 

RGT60TS65D datasheet

 ..1. Size:745K  rohm
 rgt60ts65d.pdf pdf_icon

RGT60TS65D

RGT60TS65D 650V 30A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 30A VCE(sat) (Typ.) 1.65V PD 194W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i... See More ⇒

Specs: ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , FGW75N60HD , RGT80TS65D , RGT8BM65D , RGT8NS65D , RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 .

Keywords - RGT60TS65D transistor spec

 RGT60TS65D cross reference
 RGT60TS65D equivalent finder
 RGT60TS65D lookup
 RGT60TS65D substitution
 RGT60TS65D replacement

 

 

 


 
↑ Back to Top
.