All IGBT. RGT8NS65D Datasheet

 

RGT8NS65D Datasheet and Replacement


   Type Designator: RGT8NS65D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 4 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 14 pF
   Package: TO263
 

 RGT8NS65D substitution

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RGT8NS65D Datasheet (PDF)

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RGT8NS65D

RGT8NS65D 650V 4A Field Stop Trench IGBT Data SheetlOutline LPDS (TO-263S)VCES650V(2) IC(100C)4AVCE(sat) (Typ.)1.65V(1) (3) PD65WlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*

Datasheet: RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , IRGP4062D , RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D .

Keywords - RGT8NS65D transistor datasheet

 RGT8NS65D cross reference
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