All IGBT. RGT8NS65D Datasheet

 

RGT8NS65D Datasheet and Replacement


   Type Designator: RGT8NS65D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 4 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 14 pF
   Package: TO263
      - IGBT Cross-Reference

 

RGT8NS65D Datasheet (PDF)

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RGT8NS65D

RGT8NS65D 650V 4A Field Stop Trench IGBT Data SheetlOutline LPDS (TO-263S)VCES650V(2) IC(100C)4AVCE(sat) (Typ.)1.65V(1) (3) PD65WlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - RGT8NS65D transistor datasheet

 RGT8NS65D cross reference
 RGT8NS65D equivalent finder
 RGT8NS65D lookup
 RGT8NS65D substitution
 RGT8NS65D replacement

 

 
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