RGT8NS65D PDF and Equivalents Search

 

RGT8NS65D Specs and Replacement

Type Designator: RGT8NS65D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 32 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 4 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 14 pF

Package: TO263

 RGT8NS65D Substitution

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RGT8NS65D datasheet

 ..1. Size:735K  rohm
 rgt8ns65d.pdf pdf_icon

RGT8NS65D

RGT8NS65D 650V 4A Field Stop Trench IGBT Data Sheet lOutline LPDS (TO-263S) VCES 650V (2) IC(100 C) 4A VCE(sat) (Typ.) 1.65V (1) (3) PD 65W lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *... See More ⇒

Specs: RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , IRG7S313U , RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D .

History: IXA20RG1200DHGLB

Keywords - RGT8NS65D transistor spec

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