All IGBT. RGT8NS65D Datasheet

 

RGT8NS65D IGBT. Datasheet pdf. Equivalent


   Type Designator: RGT8NS65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 4 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 14 pF
   Qgⓘ - Total Gate Charge, typ: 13.5 nC
   Package: TO263

 RGT8NS65D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGT8NS65D Datasheet (PDF)

 ..1. Size:735K  rohm
 rgt8ns65d.pdf

RGT8NS65D RGT8NS65D

RGT8NS65D 650V 4A Field Stop Trench IGBT Data SheetlOutline LPDS (TO-263S)VCES650V(2) IC(100C)4AVCE(sat) (Typ.)1.65V(1) (3) PD65WlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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