RGTH00TS65D Datasheet. Specs and Replacement

Type Designator: RGTH00TS65D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 138 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 63 nS

Coesⓘ - Output Capacitance, typ: 106 pF

Package: TO247

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RGTH00TS65D datasheet

 ..1. Size:740K  rohm
 rgth00ts65d.pdf pdf_icon

RGTH00TS65D

RGTH00TS65D 650V 50A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 50A VCE(sat) (Typ.) 1.6V PD 277W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Bui... See More ⇒

 4.1. Size:657K  rohm
 rgth00ts65.pdf pdf_icon

RGTH00TS65D

RGTH00TS65 650V 50A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 50A VCE(sat) (Typ.) 1.6V PD 277W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplica... See More ⇒

Specs: RGT40NS65D, RGT40TS65D, RGT50TS65D, RGT60TS65D, RGT80TS65D, RGT8BM65D, RGT8NS65D, RGTH00TS65, IRG4PF50W, RGTH40TS65, RGTH40TS65D, RGTH50TS65, RGTH50TS65D, RGTH60TS65, RGTH60TS65D, RGTH80TS65, RGTH80TS65D

Keywords - RGTH00TS65D transistor spec

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