RGTH40TS65D Datasheet. Specs and Replacement
Type Designator: RGTH40TS65D 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 72 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 47 pF
Package: TO247
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RGTH40TS65D datasheet
rgth40ts65d.pdf
RGTH40TS65D 650V 20A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 20A VCE(sat) (Typ.) 1.6V PD 144W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Bui... See More ⇒
rgth40ts65.pdf
RGTH40TS65 650V 20A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 20A VCE(sat) (Typ.) 1.6V PD 144W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplica... See More ⇒
Specs: RGT50TS65D, RGT60TS65D, RGT80TS65D, RGT8BM65D, RGT8NS65D, RGTH00TS65, RGTH00TS65D, RGTH40TS65, IKW40N120H3, RGTH50TS65, RGTH50TS65D, RGTH60TS65, RGTH60TS65D, RGTH80TS65, RGTH80TS65D, RJP4007ANS, HIA20N60BP
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