All IGBT. RGTH40TS65D Datasheet

 

RGTH40TS65D Datasheet and Replacement


   Type Designator: RGTH40TS65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 72 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 47 pF
   Qg ⓘ - Total Gate Charge, typ: 40 nC
   Package: TO247
 

 RGTH40TS65D substitution

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RGTH40TS65D Datasheet (PDF)

 ..1. Size:738K  rohm
 rgth40ts65d.pdf pdf_icon

RGTH40TS65D

RGTH40TS65D 650V 20A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)20AVCE(sat) (Typ.)1.6VPD144W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector *1 3) Low Switching Loss & Soft Switching(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Bui

 4.1. Size:258K  rohm
 rgth40ts65.pdf pdf_icon

RGTH40TS65D

RGTH40TS65 650V 20A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)20AVCE(sat) (Typ.)1.6VPD144W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant(3) lApplica

Datasheet: RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , RGT8NS65D , RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , KGF75N65KDF , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , HIA20N60BP .

Keywords - RGTH40TS65D transistor datasheet

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