All IGBT. RGTH50TS65D Datasheet

 

RGTH50TS65D Datasheet and Replacement


   Type Designator: RGTH50TS65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 87 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 57 pF
   Qgⓘ - Total Gate Charge, typ: 49 nC
   Package: TO247
      - IGBT Cross-Reference

 

RGTH50TS65D Datasheet (PDF)

 ..1. Size:742K  rohm
 rgth50ts65d.pdf pdf_icon

RGTH50TS65D

RGTH50TS65D 650V 25A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)25AVCE(sat) (Typ.)1.6VPD174W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector *1 3) Low Switching Loss & Soft Switching(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Bui

 4.1. Size:645K  rohm
 rgth50ts65.pdf pdf_icon

RGTH50TS65D

RGTH50TS65 650V 25A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)25AVCE(sat) (Typ.)1.6VPD174W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant(3) lApplica

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - RGTH50TS65D transistor datasheet

 RGTH50TS65D cross reference
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 RGTH50TS65D replacement

 

 
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