All IGBT. HIL40N120VF Datasheet

 

HIL40N120VF Datasheet and Replacement


   Type Designator: HIL40N120VF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 64 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 295 pF
   Package: TO264
      - IGBT Cross-Reference

 

HIL40N120VF Datasheet (PDF)

 ..1. Size:851K  semihow
 hil40n120vf.pdf pdf_icon

HIL40N120VF

Jan 2014VCES = 1200 VIC = 40 AHIL40N120VF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-264Employing Field Stop technology, CO-PAK, IGBT with FRD.1200V/40A planar gate IGBTs provide low Conduction,switching losses and very good ruggedness. ApplicationsG C EInduction Heating, UPS, welding convertersand general purpose inverters. Absolute Maximum RatingsSymbol P

 5.1. Size:909K  semihow
 hil40n120tf.pdf pdf_icon

HIL40N120VF

Dec 2013VCES = 1200 VIC = 40 AHIL40N120TF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-264FEATURES 1200V Field Stop Trench Technology High Speed SwitchingG C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel OperationAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 1200 VCollector Current Conti

Datasheet: RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , RJP30E2DPP-M0 , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG .

History: IXGP12N100A | IXGH40N30BD1

Keywords - HIL40N120VF transistor datasheet

 HIL40N120VF cross reference
 HIL40N120VF equivalent finder
 HIL40N120VF lookup
 HIL40N120VF substitution
 HIL40N120VF replacement

 

 
Back to Top

 


 
.