HIL40N120VF Datasheet. Specs and Replacement

Type Designator: HIL40N120VF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 64 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 65 nS

Coesⓘ - Output Capacitance, typ: 295 pF

Package: TO264

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HIL40N120VF datasheet

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HIL40N120VF

Jan 2014 VCES = 1200 V IC = 40 A HIL40N120VF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-264 Employing Field Stop technology, CO-PAK, IGBT with FRD. 1200V/40A planar gate IGBTs provide low Conduction, switching losses and very good ruggedness. Applications G C E Induction Heating, UPS, welding converters and general purpose inverters. Absolute Maximum Ratings Symbol P... See More ⇒

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HIL40N120VF

Dec 2013 VCES = 1200 V IC = 40 A HIL40N120TF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-264 FEATURES 1200V Field Stop Trench Technology High Speed Switching G C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current Conti... See More ⇒

Specs: RJP4007ANS, HIA20N60BP, HIA30N60BP, HIH20N60BP, HIH25N120TN, HIH30N120TF, HIH30N60BP, HIL40N120TF, G50T65D, APT100GN120JDQ4, APT100GT60JR, APT12GT60KRG, APT13GP120BDQ1G, APT150GN120JDQ4, APT150GT120JR, APT15GN120KG, APT15GP60BG

Keywords - HIL40N120VF transistor spec

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