ART10U120 Datasheet and Replacement
Type Designator: ART10U120
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO220
ART10U120 substitution
ART10U120 Datasheet (PDF)
art10u120.pdf
ART10U120 INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control Low conduction losses VCES=1200 V High switching speed VCE(on) typ. =4,0 V Tighter parameter distribution @VGE =15V, Ic=10A TO-220 N-channel ABSOLUTE MAXIMUM RATINGS Parameter Symbol Units MaxCollector-to-Emitter Voltage VCES V 1200Continuous Colle
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IXSX35N120AU1
Keywords - ART10U120 transistor datasheet
ART10U120 cross reference
ART10U120 equivalent finder
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History: IXSX35N120AU1
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