HGTM12N50C1 Datasheet. Specs and Replacement
Type Designator: HGTM12N50C1 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
Package: TO3
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HGTM12N50C1 datasheet
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Specs: HGTP10N40E1D, HGTP10N40F1D, HGTP10N50C1, HGTP10N50C1D, HGTP10N50E1, HGTP10N50E1D, HGTP10N50F1D, HGTP11N120CN, SGT40N60NPFDPN, HGTM12N50E1, HGTP12N60A4, HGTP12N60A4D, HGTP12N60B3, HGTP12N60B3D, HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1
Keywords - HGTM12N50C1 transistor spec
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