VS-150MT060WDF Datasheet and Replacement
Type Designator: VS-150MT060WDF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 543 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 138 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.11 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 1010 pF
Package: MODULE
- IGBT Cross-Reference
VS-150MT060WDF Datasheet (PDF)
vs-150mt060wdf.pdf

VS-150MT060WDFwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Dual ForwardFEATURES Buck PFC stage with warp 3 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial levelMTP Material categor
Datasheet: SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , RJH60F7BDPQ-A0 , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP .
History: STGP10NC60HD | SL20T65F | RJP60V0DPM | MG300N1US1 | GT10G101 | CM900HC-90H | APTGF75SK60D1
Keywords - VS-150MT060WDF transistor datasheet
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History: STGP10NC60HD | SL20T65F | RJP60V0DPM | MG300N1US1 | GT10G101 | CM900HC-90H | APTGF75SK60D1



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