VS-150MT060WDF PDF and Equivalents Search

 

VS-150MT060WDF Specs and Replacement

Type Designator: VS-150MT060WDF

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 543 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 138 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.11 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V

tr ⓘ - Rise Time, typ: 79 nS

Coesⓘ - Output Capacitance, typ: 1010 pF

Qg ⓘ - Total Gate Charge, typ: 540 nC

Package: MODULE

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VS-150MT060WDF datasheet

 ..1. Size:184K  vishay
 vs-150mt060wdf.pdf pdf_icon

VS-150MT060WDF

VS-150MT060WDF www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Dual Forward FEATURES Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial level MTP Material categor... See More ⇒

Specs: SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , IRGB20B60PD1 , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP .

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