All IGBT. VS-150MT060WDF Datasheet

 

VS-150MT060WDF IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-150MT060WDF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 138 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.11 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 79 nS
   Coesⓘ - Output Capacitance, typ: 1010 pF
   Qgⓘ - Total Gate Charge, typ: 540 nC
   Package: MODULE

 VS-150MT060WDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-150MT060WDF Datasheet (PDF)

 ..1. Size:184K  vishay
 vs-150mt060wdf.pdf

VS-150MT060WDF VS-150MT060WDF

VS-150MT060WDFwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Dual ForwardFEATURES Buck PFC stage with warp 3 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial levelMTP Material categor

Datasheet: SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , GT30F132 , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP .

 

 
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