DM2G150SH6NE PDF and Equivalents Search

 

DM2G150SH6NE Specs and Replacement

Type Designator: DM2G150SH6NE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 568 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 1400 pF

Package: MODULE

 DM2G150SH6NE Substitution

- IGBT ⓘ Cross-Reference Search

 

DM2G150SH6NE datasheet

 ..1. Size:254K  dawin
dm2g150sh6ne.pdf pdf_icon

DM2G150SH6NE

D WTM D WTM DM2G150SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives 6... See More ⇒

 3.1. Size:306K  dawin
dm2g150sh6n.pdf pdf_icon

DM2G150SH6NE

D WTM D WTM DM2G150SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri... See More ⇒

 4.1. Size:524K  dawin
dm2g150sh6a.pdf pdf_icon

DM2G150SH6NE

D WTM D WTM DM2G150SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto... See More ⇒

 5.1. Size:66K  dawin
dm2g150sh12a.pdf pdf_icon

DM2G150SH6NE

Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power ... See More ⇒

Specs: VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , FGH60N60SMD , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A .

Keywords - DM2G150SH6NE transistor spec

 DM2G150SH6NE cross reference
 DM2G150SH6NE equivalent finder
 DM2G150SH6NE lookup
 DM2G150SH6NE substitution
 DM2G150SH6NE replacement

 

 

 


 
↑ Back to Top
.