HYG15P120A1K2 Datasheet and Replacement
Type Designator: HYG15P120A1K2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 40 nS
Qg ⓘ - Total Gate Charge, typ: 100 nC
Package: MODULE
HYG15P120A1K2 substitution
HYG15P120A1K2 Datasheet (PDF)
hyg15p120h1k1.pdf
HYG15P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 175 Temperature sense included Industry standard package with solderingpins for PCB mountingTypical Applications Inverter for motor drive AC and DC servo drive ampli
Datasheet: DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , FGA25N120ANTD , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 .
History: MMG25H120X6TN
Keywords - HYG15P120A1K2 transistor datasheet
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History: MMG25H120X6TN
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