HYG15P120A1K2 Datasheet and Replacement
Type Designator: HYG15P120A1K2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 40 nS
Package: MODULE
- IGBT Cross-Reference
HYG15P120A1K2 Datasheet (PDF)
hyg15p120h1k1.pdf

HYG15P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 175 Temperature sense included Industry standard package with solderingpins for PCB mountingTypical Applications Inverter for motor drive AC and DC servo drive ampli
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AOKS40B65H1 | MMG75S120B6C | DAHF225G120SB | 2MBI900VXA-120P-50 | BT15T60A8F | FGY120T65SPD-F085 | IQGB300N120I4
Keywords - HYG15P120A1K2 transistor datasheet
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History: AOKS40B65H1 | MMG75S120B6C | DAHF225G120SB | 2MBI900VXA-120P-50 | BT15T60A8F | FGY120T65SPD-F085 | IQGB300N120I4



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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