HYG15P120B1K1 PDF and Equivalents Search

 

HYG15P120B1K1 Specs and Replacement

Type Designator: HYG15P120B1K1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 156 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: MODULE

 HYG15P120B1K1 Substitution

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HYG15P120B1K1 datasheet

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HYG15P120B1K1

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HYG15P120B1K1

HYG15P120H1K1 IGBT Module F Features Low VCE sat trench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 175 Temperature sense included Industry standard package with soldering pins for PCB mounting Typical Applications Inverter for motor drive AC and DC servo drive ampli... See More ⇒

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Specs: DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , CRG60T60AN3H , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 .

Keywords - HYG15P120B1K1 transistor spec

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