HYG15P120H1K1 IGBT. Datasheet pdf. Equivalent

   Type Designator: HYG15P120H1K1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Package: MODULE

HYG15P120H1K1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

HYG15P120H1K1 Datasheet (PDF)

..1. Size:893K hy
hyg15p120h1k1.pdf

HYG15P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 175 Temperature sense included Industry standard package with solderingpins for PCB mountingTypical Applications Inverter for motor drive AC and DC servo drive ampli

5.1. Size:691K hy
hyg15p120a1k2.pdf