IFS75B12N3E4_B31 Specs and Replacement
Type Designator: IFS75B12N3E4_B31
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 385 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE IFS75B12N3E4_B31 Substitution - IGBT ⓘ Cross-Reference Search
IFS75B12N3E4_B31 datasheet
ifs75b12n3e4 b31.pdf
/ Technical Information IGBT- IFS75B12N3E4_B31 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt IGBT- / IGBT,Inverter / Preliminary Dat... See More ⇒
ifs75b12n3e4 b32.pdf
/ Technical Information IGBT- IFS75B12N3E4_B32 IGBT-modules MIPAQ base / IGBT4 and 4 diode and MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense shunt ... See More ⇒
Specs: HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , SGT60N60FD1P7 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC .
History: IXYH20N120C3
Keywords - IFS75B12N3E4_B31 transistor spec
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History: IXYH20N120C3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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