IXYP20N120C3 Datasheet and Replacement

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

1200V XPTTM VCES = 1200VIXYA20N120C3HVGenX3TM IGBTs IC110 = 20AIXYP20N120C3 VCE(sat) 3.4V IXYH20N120C3tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263HV (IXYA)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 1200 VTO-220 (IXYP)VCGR TJ = 25C to 175C, RGE

XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65B3D1GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE = 1M

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =