IXYP20N120C3 - аналоги и описание IGBT

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

1200V XPTTM VCES = 1200V IXYA20N120C3HV GenX3TM IGBTs IC110 = 20A IXYP20N120C3 VCE(sat) 3.4V IXYH20N120C3 tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 175 C 1200 V TO-220 (IXYP) VCGR TJ = 25 C to 175 C, RGE

XPTTM 650V IGBT VCES = 650V IXYA20N65C3D1 GenX3TM w/Diode IC110 = 20A IXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175 C 650

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65B3D1 GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65C3D1M GenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE =