IXYH40N120C3D1 PDF and Equivalents Search

 

IXYH40N120C3D1 Specs and Replacement

Type Designator: IXYH40N120C3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 480 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 225 pF

Package: TO247

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IXYH40N120C3D1 datasheet

 ..1. Size:267K  ixys
 ixyh40n120c3d1.pdf pdf_icon

IXYH40N120C3D1

1200V XPTTM IGBT VCES = 1200V IXYH40N120C3D1 GenX3TM w/ Diode IC90 = 40A VCE(sat) 3.5V tfi(typ) = 50ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGE... See More ⇒

 2.1. Size:252K  ixys
 ixyh40n120c3.pdf pdf_icon

IXYH40N120C3D1

1200V XPTTM IGBT VCES = 1200V IXYH40N120C3 GenX3TM IC110 = 40A VCE(sat) 3.5V tfi(typ) = 50ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transien... See More ⇒

 4.1. Size:231K  ixys
 ixyh40n120b3d1.pdf pdf_icon

IXYH40N120C3D1

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC ... See More ⇒

 4.2. Size:215K  ixys
 ixyh40n120b3.pdf pdf_icon

IXYH40N120C3D1

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3 GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings G C Tab VCES TJ = 25 C to 175 C 1200 V E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G = Gate C = Collector VGES Continuous 20 V E = Emitter Tab = C... See More ⇒

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Specs: IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , NGD8201N , IXYH50N120C3D1 , IXYK100N120C3 , IXYK120N120C3 , SG12N06DP , SG12N06DT , SG12N06P , SG12N06T , SG15N12DP .

Keywords - IXYH40N120C3D1 transistor spec

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