SG15N12P Specs and Replacement
Type Designator: SG15N12P
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 95 pF
Package: TO220AB
SG15N12P Substitution - IGBT ⓘ Cross-Reference Search
SG15N12P datasheet
sg15n12p.pdf
SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M... See More ⇒
tsg15n120cn.pdf
TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒
tsg15n120.pdf
TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒
sg15n12dp.pdf
SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M... See More ⇒
Specs: IXYH50N120C3D1 , IXYK100N120C3 , IXYK120N120C3 , SG12N06DP , SG12N06DT , SG12N06P , SG12N06T , SG15N12DP , IKW50N60H3 , SG200N06S , SG20N12DT , SG20N12T , SG23N06DT , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT .
History: IHY20N135R3
Keywords - SG15N12P transistor spec
SG15N12P cross reference
SG15N12P equivalent finder
SG15N12P lookup
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History: IHY20N135R3
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