SG20N12T Datasheet and Replacement
Type Designator: SG20N12T
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Package: TO247AD
SG20N12T substitution
SG20N12T Datasheet (PDF)
sg20n12t.pdf
SG20N12T, SG20N12DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0
sg20n12dt.pdf
SG20N12T, SG20N12DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0
Datasheet: SG12N06DP , SG12N06DT , SG12N06P , SG12N06T , SG15N12DP , SG15N12P , SG200N06S , SG20N12DT , SGP30N60 , SG23N06DT , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , SG35N12T , SG45N12T , SG50N06D2S .
History: IXGX35N120C | SG23N06DT
Keywords - SG20N12T transistor datasheet
SG20N12T cross reference
SG20N12T equivalent finder
SG20N12T lookup
SG20N12T substitution
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History: IXGX35N120C | SG23N06DT
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