All IGBT. SG23N06DT Datasheet

 

SG23N06DT IGBT. Datasheet pdf. Equivalent


   Type Designator: SG23N06DT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 55 nC
   Package: TO247AD

 SG23N06DT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SG23N06DT Datasheet (PDF)

 ..1. Size:101K  sirectifier
 sg23n06dt.pdf

SG23N06DT SG23N06DT

SG23N06T, SG23N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

 7.1. Size:101K  sirectifier
 sg23n06t.pdf

SG23N06DT SG23N06DT

SG23N06T, SG23N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

Datasheet: SG12N06DT , SG12N06P , SG12N06T , SG15N12DP , SG15N12P , SG200N06S , SG20N12DT , SG20N12T , IRG4PF50WD , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , SG35N12T , SG45N12T , SG50N06D2S , SG50N06D3S .

 

 
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