SG23N06DT PDF and Equivalents Search

 

SG23N06DT Specs and Replacement

Type Designator: SG23N06DT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247AD

 SG23N06DT Substitution

- IGBT ⓘ Cross-Reference Search

 

SG23N06DT datasheet

 ..1. Size:101K  sirectifier
 sg23n06dt.pdf pdf_icon

SG23N06DT

SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 ... See More ⇒

 7.1. Size:101K  sirectifier
 sg23n06t.pdf pdf_icon

SG23N06DT

SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 ... See More ⇒

Specs: SG12N06DT , SG12N06P , SG12N06T , SG15N12DP , SG15N12P , SG200N06S , SG20N12DT , SG20N12T , RJH60F7BDPQ-A0 , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , SG35N12T , SG45N12T , SG50N06D2S , SG50N06D3S .

Keywords - SG23N06DT transistor spec

 SG23N06DT cross reference
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