SG25S12DT PDF and Equivalents Search

 

SG25S12DT Specs and Replacement

Type Designator: SG25S12DT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 313 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 46 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.35 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO247AD

 SG25S12DT Substitution

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SG25S12DT datasheet

 ..1. Size:104K  sirectifier
 sg25s12dt.pdf pdf_icon

SG25S12DT

SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 ... See More ⇒

 7.1. Size:104K  sirectifier
 sg25s12t.pdf pdf_icon

SG25S12DT

SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 ... See More ⇒

Specs: SG12N06T , SG15N12DP , SG15N12P , SG200N06S , SG20N12DT , SG20N12T , SG23N06DT , SG23N06T , IKW30N60H3 , SG25S12T , SG35N12DT , SG35N12T , SG45N12T , SG50N06D2S , SG50N06D3S , SG50N06DS , SG50N06DT .

History: SGB02N120 | SG20N12T | IGD01N120H2 | IKW40N60H3 | SG200N06S | IGW25N120H3

Keywords - SG25S12DT transistor spec

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