All IGBT. SG50N06DS Datasheet

 

SG50N06DS Datasheet and Replacement


   Type Designator: SG50N06DS
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 340 pF
   Qg ⓘ - Total Gate Charge, typ: 110 nC
   Package: SOT227
 

 SG50N06DS substitution

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SG50N06DS Datasheet (PDF)

 ..1. Size:152K  sirectifier
 sg50n06ds.pdf pdf_icon

SG50N06DS

SG50N06S, SG50N06DSDiscrete IGBTsC Dim. Millimeter InchesEDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169G=Gate, C=Collector, F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193E=EmitterH 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0

 6.1. Size:101K  sirectifier
 sg50n06dt.pdf pdf_icon

SG50N06DS

SG50N06T, SG50N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

 6.2. Size:149K  sirectifier
 sg50n06d2s.pdf pdf_icon

SG50N06DS

SG50N06D2S, SG50N06D3SDiscrete IGBTsDim. Millimeter InchesDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033

 6.3. Size:149K  sirectifier
 sg50n06d3s.pdf pdf_icon

SG50N06DS

SG50N06D2S, SG50N06D3SDiscrete IGBTsDim. Millimeter InchesDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033

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Datasheet: SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , SG35N12T , SG45N12T , SG50N06D2S , SG50N06D3S , FGH75T65UPD , SG50N06DT , SG50N06S , SG50N06T , SG75S12S , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX .

History: TGHP75N120F2D | APT50GN60BG | IXGN200N60B3 | VS-GB150TH120N | OST40N120HMF | TGHP75N120FDR | F3L200R12W2H3_B11

Keywords - SG50N06DS transistor datasheet

 SG50N06DS cross reference
 SG50N06DS equivalent finder
 SG50N06DS lookup
 SG50N06DS substitution
 SG50N06DS replacement

 

 
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