All IGBT. SG75S12S Datasheet

 

SG75S12S Datasheet and Replacement


   Type Designator: SG75S12S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 340 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 1600 pF
   Qgⓘ - Total Gate Charge, typ: 750 nC
   Package: SOT227
      - IGBT Cross-Reference

 

SG75S12S Datasheet (PDF)

 ..1. Size:1014K  sirectifier
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SG75S12S

SG75S12SDiscrete IGBTsDim. Millimeter InchesDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033M 12.60 12.85

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SGT50T65FD1P7 | OST15N65PRF | SGT10T60SD1F | IKW75N60TA | TA49115 | SG40T120DB | STGWA60H65DFB

Keywords - SG75S12S transistor datasheet

 SG75S12S cross reference
 SG75S12S equivalent finder
 SG75S12S lookup
 SG75S12S substitution
 SG75S12S replacement

 

 
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