SG75S12S Datasheet and Replacement
Type Designator: SG75S12S
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 340 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 1600 pF
Package: SOT227
SG75S12S substitution
SG75S12S Datasheet (PDF)
sg75s12s.pdf

SG75S12SDiscrete IGBTsDim. Millimeter InchesDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033M 12.60 12.85
Datasheet: SG35N12T , SG45N12T , SG50N06D2S , SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T , IHW40T60 , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX .
History: RJH60V1BDPE | MIXG180W1200TEH | IRG7PG35U | IXST30N60B2D1 | BLG75T65FDK-F | NGTB40N120LWG | MII300-12E4
Keywords - SG75S12S transistor datasheet
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SG75S12S equivalent finder
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History: RJH60V1BDPE | MIXG180W1200TEH | IRG7PG35U | IXST30N60B2D1 | BLG75T65FDK-F | NGTB40N120LWG | MII300-12E4



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