SG7N06DP PDF and Equivalents Search

 

SG7N06DP Specs and Replacement

Type Designator: SG7N06DP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 54 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 14 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO220AB

 SG7N06DP Substitution

- IGBT ⓘ Cross-Reference Search

 

SG7N06DP datasheet

 ..1. Size:165K  sirectifier
 sg7n06dp.pdf pdf_icon

SG7N06DP

SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M 0... See More ⇒

 8.1. Size:165K  sirectifier
 sg7n06p.pdf pdf_icon

SG7N06DP

SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M 0... See More ⇒

Specs: SG45N12T , SG50N06D2S , SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T , SG75S12S , AOK40B65H2AL , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX .

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