All IGBT. SG7N06DP Datasheet

 

SG7N06DP IGBT. Datasheet pdf. Equivalent


   Type Designator: SG7N06DP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 54 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qgⓘ - Total Gate Charge, typ: 25 nC
   Package: TO220AB

 SG7N06DP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SG7N06DP Datasheet (PDF)

 ..1. Size:165K  sirectifier
 sg7n06dp.pdf

SG7N06DP SG7N06DP

SG7N06P, SG7N06DPDiscrete IGBTsDimensions TO-220ABDim. Inches Milimeter Min. Max. Min. Max.A 0.500 0.550 12.70 13.97EB 0.580 0.630 14.73 16.00CC 0.390 0.420 9.91 10.66GD 0.139 0.161 3.54 4.08E 0.230 0.270 5.85 6.85G=Gate, C=Collector, E=EmitterF 0.100 0.125 2.54 3.18G 0.045 0.065 1.15 1.65H 0.110 0.230 2.79 5.84J 0.025 0.040 0.64 1.01K 0.100 BSC 2.54 BSCM 0

 8.1. Size:165K  sirectifier
 sg7n06p.pdf

SG7N06DP SG7N06DP

SG7N06P, SG7N06DPDiscrete IGBTsDimensions TO-220ABDim. Inches Milimeter Min. Max. Min. Max.A 0.500 0.550 12.70 13.97EB 0.580 0.630 14.73 16.00CC 0.390 0.420 9.91 10.66GD 0.139 0.161 3.54 4.08E 0.230 0.270 5.85 6.85G=Gate, C=Collector, E=EmitterF 0.100 0.125 2.54 3.18G 0.045 0.065 1.15 1.65H 0.110 0.230 2.79 5.84J 0.025 0.040 0.64 1.01K 0.100 BSC 2.54 BSCM 0

Datasheet: SG45N12T , SG50N06D2S , SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T , SG75S12S , YGW40N65F1A1 , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX .

 

 
Back to Top